Ultra On-Chip Memory Tech by IBM
Ultra On-Chip Memory Tech by IBM
In papers presented at the International Solid State Circuits Conference (ISSCC) today, IBM revealed a first-of-its-kind, on-chip memory technology that features the fastest access times ever recorded in eDRAM (embedded dynamic random access memory).
This new technology, designed using IBM’s Silicon-on-Insulator (SOI) for high-performance at low power, vastly improves microprocessor performance in multi-core designs and speeds the movement of graphics in gaming, networking, and other image intensive, multi-media applications.
The technology is expected to be a key feature of IBM’s 45nm (nanometer) microprocessor roadmap and will become available beginning in 2008.
IBM’s new eDRAM technology, designed in stress-enabled 65nm SOI using deep trench, dramatically improves on-processor memory performance in about one-third the space with one-fifth the standby power of conventional SRAM (static random access memory).
“With this breakthrough solution to the processor/memory gap, IBM is effectively doubling microprocessor performance beyond what classical scaling alone can achieve,” said Dr. Subramanian Iyer, Distinguished Engineer and director of 45 nm technology development at IBM. “As semiconductor components have reached the atomic scale, design innovation at the chip-level has replaced materials science as a key factor in continuing Moore’s Law. Today’s announcement further demonstrates IBM’s leadership in this critical area of microprocessor design innovation.”
"This DRAM now is almost as fast as SRAM. It may not be as fast at the micro level, but when you get down to 45-nm, it will be faster at the system level. It's going to just blow the doors off," John Barth, senior technology staff member and chief of eDRAM architecture for IBM said. "A typical microprocessor takes 14 clock cycles to get data from its cache. Using DRAM slows that down, but only one clock [cycle]. By doubling the amount of memory on the die, we can get double-digit percentage gains at the system level."
IBM innovations in microelectronics and the company's groundbreaking system-on-a-chip designs have transformed the world of semiconductors. IBM breakthroughs include High-k, which enhances the transistor’s function while allowing it to be shrunk beyond today's limits, dual-core and multi-core microprocessors, copper on-chip wiring, silicon-on-insulator and silicon germanium transistors, strained silicon, and eFUSE, a technology that enables computer chips to automatically respond to changing conditions.
The technology could have a big impact on consumer electronics, since IBM supplies chips for all three of the top gaming consoles: PlayStation 3, Nintendo Wii and Xbox 360.
eDRAM Specifications
Among the specifications of IBM’s high-performance eDRAM technology:
cell size: 0.126 mm2
Power supply: 1 V
availability: 98.7%
Tile: 1K RowX16 Col X146 (2Mb)
AC power: 76 mW
standby keep alive Power: 42 mW
Random cycle time: 2ns
Latency: 1.5ns
Found via Google
In papers presented at the International Solid State Circuits Conference (ISSCC) today, IBM revealed a first-of-its-kind, on-chip memory technology that features the fastest access times ever recorded in eDRAM (embedded dynamic random access memory).
This new technology, designed using IBM’s Silicon-on-Insulator (SOI) for high-performance at low power, vastly improves microprocessor performance in multi-core designs and speeds the movement of graphics in gaming, networking, and other image intensive, multi-media applications.
The technology is expected to be a key feature of IBM’s 45nm (nanometer) microprocessor roadmap and will become available beginning in 2008.
IBM’s new eDRAM technology, designed in stress-enabled 65nm SOI using deep trench, dramatically improves on-processor memory performance in about one-third the space with one-fifth the standby power of conventional SRAM (static random access memory).
“With this breakthrough solution to the processor/memory gap, IBM is effectively doubling microprocessor performance beyond what classical scaling alone can achieve,” said Dr. Subramanian Iyer, Distinguished Engineer and director of 45 nm technology development at IBM. “As semiconductor components have reached the atomic scale, design innovation at the chip-level has replaced materials science as a key factor in continuing Moore’s Law. Today’s announcement further demonstrates IBM’s leadership in this critical area of microprocessor design innovation.”
"This DRAM now is almost as fast as SRAM. It may not be as fast at the micro level, but when you get down to 45-nm, it will be faster at the system level. It's going to just blow the doors off," John Barth, senior technology staff member and chief of eDRAM architecture for IBM said. "A typical microprocessor takes 14 clock cycles to get data from its cache. Using DRAM slows that down, but only one clock [cycle]. By doubling the amount of memory on the die, we can get double-digit percentage gains at the system level."
IBM innovations in microelectronics and the company's groundbreaking system-on-a-chip designs have transformed the world of semiconductors. IBM breakthroughs include High-k, which enhances the transistor’s function while allowing it to be shrunk beyond today's limits, dual-core and multi-core microprocessors, copper on-chip wiring, silicon-on-insulator and silicon germanium transistors, strained silicon, and eFUSE, a technology that enables computer chips to automatically respond to changing conditions.
The technology could have a big impact on consumer electronics, since IBM supplies chips for all three of the top gaming consoles: PlayStation 3, Nintendo Wii and Xbox 360.
eDRAM Specifications
Among the specifications of IBM’s high-performance eDRAM technology:
cell size: 0.126 mm2
Power supply: 1 V
availability: 98.7%
Tile: 1K RowX16 Col X146 (2Mb)
AC power: 76 mW
standby keep alive Power: 42 mW
Random cycle time: 2ns
Latency: 1.5ns
Found via Google
Labels: Memory Chip
posted by Anand Kumar Reddy at
10:11 PM
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